Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

Materials Research

Wilson De Carvalho Jr¹  Ayrton André Bernussi¹  Mário Tosi Furtado¹  Ângelo Luiz Gobbi¹  Mônica A. Cotta² 

[1] ,Associação Brasileira de Luz SíncrotronCampinas SP ,Brazil

关键词: InGaAsP;    InP;    MOCVD;    strain;    multiple quantum wells;    epitaxial growth;   

DOI  :  10.1590/S1516-14391999000200002

来源: SciELO

【 摘 要 】

We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells.

【 授权许可】

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