Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

IEICE Electronics Express

Saeid Marjani¹  Rahim Faez³  Azam Marjani² 

[1] Department of Electrical Engineering, Arak Branch, Islamic Azad University;Department of Chemistry, Arak Branch, Islamic Azad University;Department of Electrical Engineering, Sharif University of Technology

关键词: design;    high power;    InGaAsP;    VCSEL;   

DOI  :  10.1587/elex.8.1096

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(20)Cited-By(8)In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5mW to 6.4mW at bias current of 9mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work.

【 授权许可】

Unknown