Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

Micro & nano letters

article

Sheikh Ahmed¹  Mashiyat Shawkat¹  Iramul Chowdhury¹  Sharif Mominuzzaman² 

[1] Department of Electrical and Electronic Engineering, BRAC University;Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology

关键词: ballistic transport;    nanoribbons;    graphene;    graphene devices;    carbon nanotube field effect transistors;    carbon nanotubes;    nanoelectronics;    Schottky barriers;    Schottky gate field effect transistors;    permittivity;    electrical conductivity;    gate dielectric material dependence;    current-voltage characteristics;    ballistic Schottky barrier graphene nanoribbon field-effect transistor;    carbon nanotube field-effect transistor;    channel lengths;    Moore law;    dielectric constant;    on-state drain currents;    off-state current ratios;    transconductance;    C;   

DOI  :  10.1049/mnl.2015.0193

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Local anesthetics are commonly used as analgesic and anesthetics. The systemic toxicity of local anesthetics involves CNS and cardiovascular system. Grand mal seizure, as a critical event may occur during toxicity due to high doses, rapid entry of local anesthetic into the systemic circulation and erroneous injection of local anesthetics through the intravenous route. We would like to present a case that experienced tonic clonic convulsion in spite of administration of low dose intrathecal bupivacaine and intraurethral lidocaine gel.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND