Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Tarasov, S.A.^1 ; Andreev, M.Y.^1 ; Lamkin, I.A.^1 ; Solomonov, A.V.^1

Saint-Petersburg Electrotechnical University LETT, Prof. Popova 5, St. Petersburg

197376, Russia^1

关键词: Gallium arsenide phosphide;    P-n junction;    Preliminary treatment;    Schottky barriers;    Selectivity control;    Semi-conductor surfaces;    Spectral sensitivity;    Surface recombinations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012085/pdf
DOI  :  10.1088/1742-6596/741/1/012085

来源: IOP

【 摘 要 】

In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed.