PSJ LDMOS with a VK dielectric layer

Micro & nano letters

article

Lijuan Wu¹  Yiqing Wu¹  Bing Lei¹  Yinyan Zhang¹  Ye Huang¹  Lin Zhu¹ 

[1] School of Physical and Electronic Science, Changsha University of Science and Technology

关键词: electric fields;    charge compensation;    silicon;    semiconductor device breakdown;    elemental semiconductors;    silicon-on-insulator;    MOSFET;    semiconductor doping;    buried layers;    low-k dielectric thin films;    VK dielectric layer;    partial super junction lateral double-diffused metal–oxide–semiconductor field-effect transistor;    PSJ VK LDMOS;    low-resistance channel;    enhanced dielectric layer field;    high breakdown voltage;    substrate-assisted depletion effect;    charge compensation layer;    lateral doping technique;    PSJ SOI LDMOS;    low-k material;    low-k buried layer;    lateral BV;    figure of merit;    FOM;    drift region length;    voltage 795.5 V;    size 46.5 mum;    Si;   

DOI  :  10.1049/mnl.2018.5467

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A partial super junction lateral double-diffused metal–oxide–semiconductor field-effect transistor with a variable- k dielectric layer (PSJ VK LDMOS) is proposed in this Letter. Low- k material and PSJ are introduced into the device. PSJ provides a low-resistance channel to reduce the specific on-resistance ( R on,sp ). Furthermore, according to an enhanced dielectric layer field, low- k buried layer can sustain the high breakdown voltage (BV). To eliminate substrate-assisted depletion effect and improve the lateral BV of the proposed structure, the charge compensation layer in the device adopts a variation of lateral doping technique and is combined with the N pillar in PSJ. Ultimately, the simulation results show that BV of 795.5 V and the figure of merit (FOM) of 6.1 MW cm −2 are achieved for PSJ VK LDMOS. BV and FOM are enhanced by 71.4 and 81.1%, respectively, compared with con. PSJ SOI LDMOS with the drift region length of 46.5 μm. Furthermore, R on,sp of 103.4 mΩ cm 2 is reduced by 31.2% compared with the ‘silicon limit’ at the same BV class, which breaks the ‘silicon limit’.

【 授权许可】

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