Materials | |
Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices | |
Shojan P. Pavunny1  James F. Scott1  | |
[1] Department of Physics and Institute for Functional Nanomaterials, University of |
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关键词: LaGdO3; gate oxide; high-k dielectrics; amorphous; optical; metal-oxide-semiconductor; metal-insulator-metal; equivalent oxide thickness; | |
DOI : 10.3390/ma7042669 | |
来源: mdpi | |
【 摘 要 】
A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.
【 授权许可】
CC BY
© 2014 by the authors; licensee MDPI, Basel, Switzerland
【 预 览 】
Files | Size | Format | View |
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RO202003190027694ZK.pdf | 1644KB | download |