Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Materials

Shojan P. Pavunny¹  James F. Scott¹ 

[1] Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA; E-Mail:

关键词: LaGdO₃;    gate oxide;    high-k dielectrics;    amorphous;    optical;    metal-oxide-semiconductor;    metal-insulator-metal;    equivalent oxide thickness;   

DOI  :  10.3390/ma7042669

来源: mdpi

【 摘 要 】

A comprehensive study on the ternary dielectric, LaGdO₃, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland