Applied Sciences | |
Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs | |
Yen-Ting Chen1  Yanzhen Wang2  | |
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, TX 78758, USA; | |
关键词: InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics; | |
DOI : 10.3390/app2010233 | |
来源: mdpi | |
【 摘 要 】
This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3–5 min. Approximately 5× reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm−2eV−1 has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm2/Vs.
【 授权许可】
CC BY
© 2012 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190045074ZK.pdf | 599KB | download |