Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

Applied Sciences

Yen-Ting Chen¹  Yanzhen Wang² 

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, TX 78758, USA;

关键词: InGaAs;    HfO₂;    fluorine plasma treatment;    high-k dielectrics;   

DOI  :  10.3390/app2010233

来源: mdpi

【 摘 要 】

This paper reports significant improvements in the electrical performance of In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF₄/O₂ plasma treatment. The optimum condition of CF₄/O₂ plasma treatment has been systematically studied and found to be 30 W for 3–5 min. Approximately 5× reduction in interface trap density from 2.8 × 10¹² to 4.9 × 10¹¹ cm⁻²eV⁻¹ has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm²/Vs.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.