Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation

performance;drain current;double gate;mosfet;monte carlo;modeling;simulation;theoretical;misalignment;quantum correction;schrodinger equation;gate oxide;dielectric constant;short channel effects;boltzmann transport equation;band structure;finite difference;volume inversion;high-K;thermal analysis;phonons

Ismail, Fawad H. ; Ravaioli, Umberto ; Ravaioli ; Umberto

关键词: performance;    drain current;    double gate;    mosfet;    monte carlo;    modeling;    simulation;    theoretical;    misalignment;    quantum correction;    schrodinger equation;    gate oxide;    dielectric constant;    short channel effects;    boltzmann transport equation;    band structure;    finite difference;    volume inversion;    high-K;    thermal analysis;    phonons;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/14639/Ismail_Fawad.pdf?sequence=2&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

In this thesis, we explore the performance characteristics, speci cally thedrain current drive, of the double gate silicon MOSFET device, usingMoCa, the Monte Carlo simulator. Drain current performance is analyzedas a result of varying di erent parameters like oxide thickness, dielectricconstant, and misalignment of top and bottom gates. An interesting resultis obtained in the misalignment analysis, according to which overlap withsource increases the drain current, even in the presence of drain underlap.Misalignment can be tolerable in devices up to a certain extent dependingon the application. High-dielectrics and small oxide thickness are shownto improve the current drive. Comparison is made betweenquantum-corrected and classical simulation results. Change in potentialand concentration pro les in the quantum-corrected simulation is the resultof coupling between the Schr odinger and the Poisson equations. The draincurrent increase compared to a conventional MOSFET of the samedimensions and materials is shown to be signi cant. Main features of thefull band quantum-corrected Monte Carlo simulator are delineated and itssigni cance at the mesoscopic scale is discussed. Finally recent research onelectrothermal analysis is reviewed and its importance in relation to thecurrent work is explained. An outline of possible future work is presentedfor both the simulator and the device.