Room temperature high hydrogen gas response in Pd/TiO 2 /Si/Al capacitive sensor

Micro & nano letters

article

Smrity Ratan¹  Chandan Kumar¹  Amit Kumar¹  Deepak Kumar Jarwal¹  Ashwini Kumar Mishra¹  Rishibrind Kumar Upadhyay¹  Abhinav Pratap Singh¹  Satyabrata Jit¹ 

[1] Department of Electronics Engineering, Indian Institute of Technology (BHU)

关键词: MIS devices;    thin films;    scanning electron microscopy;    surface morphology;    palladium;    elemental semiconductors;    capacitance;    hydrogen;    atomic force microscopy;    capacitive sensors;    titanium compounds;    gas sensors;    silicon;    aluminium;    room temperature high hydrogen gas response;    p-type silicon substrate;    gate oxide;    atomic force microscopy;    scanning electron microscopy;    capacitance–voltage measurements;    palladium-titanium dioxide-silicon-aluminiumbased metal-oxide semiconductor;    conductance–voltage measurements;    thermally evaporated titanium dioxide thin film;    temperature 293.0 K to 298.0 K;    Pd-TiO2-Si-Al;    H2;   

DOI  :  10.1049/mnl.2020.0154

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

This Letter reports the high gas response for hydrogen gas (H 2 ) in Pd/TiO 2 /Si/Al based metal-oxide semiconductor (MOS) sensor. Titanium oxide (TiO 2 ) thin film deposited on the p-type silicon (Si) substrate is used as the gate oxide of the MOS sensor. The surface morphology of thermally evaporated TiO 2 thin film is investigated for the film structure using atomic force microscopy and scanning electron microscopy. The proposed MOS sensor characterised by capacitance–voltage ( C–V) and conductance–voltage ( G–V) measurements under exposure of different concentration of H 2 gas at room temperature in the ambient-air atmosphere. The maximum gas response of 65% calculated from the change in capacitance and 84% calculated from the change in conductance are obtained for the exposure of 4% of H 2 gas. The obtained maximum gas responses are highly promising for low concentration detection of hydrogen gas (4%) using the fabricated MOS sensor operated at room temperature under zero bias voltage condition.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND