Comparison of different etching methods on the morphology and semiconductor characters of black silicon

3rd Annual International Workshop on Materials Science and Engineering

Meng, Wenlin^1 ; Zhong, Hao^2 ; Hou, Wei^1 ; Gou, Yanhao^1 ; Song, Yuhao^1 ; Li, Wei^2

School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu

610054, China^1

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

610054, China^2

关键词: Crystalline silicons;    Deep Reactive Ion Etching;    Metal catalyzed chemical etchings;    Minority carrier lifetimes;    Near infrared band;    P-i-n photodetectors;    Semiconductor characters;    Silicon photo-detector;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/250/1/012015/pdf
DOI  :  10.1088/1757-899X/250/1/012015

来源: IOP

【 摘 要 】

Femtosecond laser etching, deep reactive ion etching and metal-catalyzed chemical etching are used to fabricate black silicon. It has been found that the light absorption is significantly enhanced in the wavelength of 400∼2200nm, in which the absorption in near infrared band of black silicon etched by femtosecond laser with SF6has the highest value. It is observed that, however, the minority carrier lifetime of crystalline silicon is shortened to some extent, which can be adjusted and controlled effectively by depositing SiNxfilm to passivate the surface of black silicon. Finally, a PIN photodetector is manufactured based on black silicon and a higher responsibility of 0.57 A/W at 1060 nm is obtained compared to the PIN silicon photodetector without etching process.