Possibility of Si-based new material for thin-film solar cell applications

Tunisia-Japan Symposium: R&D of Energy and Material Sciences for Sustainable Society

能源学;材料科学;政治学;社会学

Suemasu, T.^1

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki

305-8573, Japan^1

关键词: Absorption co-efficient;    Minority carrier diffusion length;    Minority carrier lifetimes;    Optical absorption coefficients;    Photoresponses;    Si(111) substrate;    Si-based;    Solar cell performance;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/596/1/012005/pdf
DOI  :  10.1088/1742-6596/596/1/012005

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

We grow BaSi2 epitaxial films on Si(111) substrates by molecular beam epitaxy, and investigate their optical properties such as optical absorption coefficients, minority-carrier diffusion length, and minority-carrier lifetime. These are key parameters which determine the solar cell performance. The band gap of BaSi2 is measured to be approximately 1.3 eV. The absorption coefficient reaches approximately 3×104cm-1at 1.5 eV. The minority-carrier diffusion length and minority-carrier lifetime are found to be about 10 μm and 8 μs, respectively. These values are sufficiently large for thin-film solar cell applications. Internal photoresponse spectra are deduced from data obtained experimentally.