Reactive ion etching of silicon using low-power plasma etcher

19th Conference on Plasma Surface Interactions

Veselov, D.S.^1 ; Bakun, A.D.^1 ; Voronov, Yu A.^1

National Research, Nuclear University, MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe highway, Moscow

115409, Russia^1

关键词: Deep Reactive Ion Etching;    Etch rates;    Low Power;    Microelectromechanical system (MEMS);    Sulfur hexafluoride plasmas;    Wet anisotropic etching;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/748/1/012017/pdf
DOI  :  10.1088/1742-6596/748/1/012017

来源: IOP

【 摘 要 】

The paper is devoted to the study of deep reactive ion etching of silicon using diode plasma etcher system with a low-power source. Silicon wafers were etched in a sulfur hexafluoride plasma and sulfur hexafluoride/oxygen plasma. The maximum achieved silicon etch rate was about 2 μm/min. The expediency of using dry reactive ion etching in combination with wet anisotropic etching of silicon for manufacturing of microelectromechanical systems (MEMS) was demonstrated.