Relaxation phenomena in a naturally disordered Pb3O4 semiconductor

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Sevryugina, M.P.^1 ; Pshchelko, N.S.^1 ; Kadi, Ya S^1

National University of Mineral Resources, University of Mines, 21st line 2, St.-Petersburg

199106, Russia^1

关键词: Charge accumulation;    Current dependence;    Dc electric field;    Polarizing current;    Relaxation phenomena;    Sample surface;    Transfer parameters;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012016/pdf
DOI  :  10.1088/1742-6596/586/1/012016

来源: IOP

【 摘 要 】

Charge transfer in Pb3O4structures has been investigated. Electric current dependences on time at temperatures of 300-370 K and at the dc electric field strength in the range of 2·105-9·105V/m were measured. Flowing of relaxation polarizing current is shown to result in charge accumulation in the sample surface area. Experimental regularities coordinate with provisions of the relay mechanism of transfer of a charge with the participation of deep local levels. Values of the charge transfer parameters were determined.