The contribution of 3D nanoscale indium fluctuations into the efficiency droop in the green and blue InGaN/GaN LEDs

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Talnishnikh, N.A.^1 ; Chernyakov, A.E.^1 ; Shabunina, E.I.^2 ; Shmidt, N.M.^2

Submicron Heterostructures for Microelectronics Research and Engineering Center RAS, Polytekhnicheskaya 26, St. Petersburg

194021, Russia^1

Ioffe Physical Technical Institute, Polytekhnicheskaya 26, St. Petersburg

194021, Russia^2

关键词: Blue LEDs;    Current dependence;    Different shapes;    Efficiency droops;    Green LEDs;    Ingan/gan leds;    Nano scale;    On currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012101/pdf
DOI  :  10.1088/1742-6596/741/1/012101

来源: IOP

【 摘 要 】

It was shown that the contribution of 3D nanoscale indium fluctuations into the efficiency droop at j 2can be very high and results in different shapes of the efficiency dependency on current η(j) in blue and green LEDs. Reducing 3D nanoscale indium fluctuations can decrease the efficiency droop in these LEDs. The contribution of delocalized carriers is predominant at j > 50 A/cm2and the current dependences of efficiency, approximated by as η (j) α j-bwhere 0.2