期刊论文详细信息
International Journal of Technology | |
Dual Material Pile Gate Approach for Low Leakage Finfet | |
Sanjay S.Chopade1  | |
关键词: Bulk FinFET; Charge accumulation; Leakage current; Lower doping; Pile Gate FinFET; | |
DOI : 10.14716/ijtech.v8i1.3699 | |
学科分类:工程和技术(综合) | |
来源: Universitas Indonesia | |