Stepped Current-Voltage Relation and THz Oscillations in GaN MOSFET Due to Optical Phonon Emission: Monte Carlo simulation

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Gruinskis, V.^1 ; Shiktorov, P.^1 ; Starikov, E.^1 ; Marinchio, H.^2 ; Palermo, C.^2 ; Torres, J.^2 ; Varani, L.^2

Semiconductor Physics Institute, Center for Sciences and Technology, A. Gotauto 11, Vilnius

LT-01108, Lithuania^1

Institut d'Electronique et des Systémes (CC 05005), Université de Montpellier, Campus St Priest, 860 rue de St Priest, Montpellier Cedex 5

34095, France^2

关键词: Boltzmann transport;    Current dependence;    Current-voltage relations;    Electron transport;    Excess electrons;    Monte Carlo particles;    Optical phonon emission;    Self-oscillations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012034/pdf
DOI  :  10.1088/1742-6596/647/1/012034

来源: IOP

【 摘 要 】

Electron transport and drain current noise in wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation that simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at positive gate voltages giving excess electron concentration in the n-region of the channel, drain current self-oscillations in the THz frequency range up to 6 THz are possible. These self-oscillations are driven by an electron plasma instability. Additionally a step-like drain current dependence on drain bias is demonstrated.