会议论文

1 Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination [会议论文]

作者:Vinnichenko, M.Ya.^1;Makhov, I.S.^1;Selivanov, A.V.^1;等

关键词:Auger recombination;InGaAsSb;...

会议举办机构:Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg

会议时间:2017

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2 Model-simulation of light-induced defect creation in hydrogenated amorphous silicon [会议论文]

作者:Morigaki, K.^1,3, Hikita, H.^2

关键词:Diffusion distance;Diffusion time;...

会议举办机构:Department of Electrical-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima

会议时间:2015

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3 Towards a better understanding of trench defects in InGaN/GaN quantum wells [会议论文]

作者:Massabuau, F.C.-P.^1;Trinh-Xuan, L.^1;Lodié, D.^1;等

关键词:Basal plane stacking faults;Emission properties;...

会议举办机构:Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom^1

会议时间:

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4 Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC [会议论文]

作者:Grivickas, V.^1;Gulbinas, K.^1;Jokubaviius, V.^2;等

关键词:Donor-acceptor pairs;Electron lifetime;...

会议举办机构:Institute of Applied Research, Vilnius University, Saultekio av. 10, Vilnius, 10223, Lithuania^1

会议时间:

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5 3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells [会议论文]

作者:Wang, J.L.^1;Yi, T.C.^1;Zheng, Y.^1;等

关键词:GaInP/GaAs/Ge;Irradiation effect;...

会议举办机构:Key Laboratory of Beam Technology and Materials Modification, Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing

会议时间:

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