3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells

2017 International Conference on New Energy and Future Energy System

Wang, J.L.^1 ; Yi, T.C.^1 ; Zheng, Y.^1 ; Wu, R.^1 ; Wang, R.^1

Key Laboratory of Beam Technology and Materials Modification, Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing

100875, China^1

关键词: GaInP/GaAs/Ge;    Irradiation effect;    Non-radiative recombinations;    Performance degradation;    Temperature dependent photoluminescences;    Triple junction (3J);    Triple junction solar cells;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/93/1/012060/pdf
DOI  :  10.1088/1755-1315/93/1/012060

来源: IOP

【 摘 要 】

3.0 MeV proton-irradiation effects on the GaAs middle cell and the GaInP top cell of n+-p GaInP/GaAs/Ge triple-junction (3J) solar cells have been analyzed using temperature-dependent photoluminescence (PL) technique. The E5 (Ec- 0.96 eV) electron trap in the GaAs middle cell, the H2 (Ev+ 0.55 eV) hole trap in the GaInP top cell are identified as the proton irradiation-induced non-radiative recombination centers, respectively, causing the performance degradation of the triple-junction solar cells. The GaAs middle cell is less resistant to proton irradiation than the GaInP top cell.