Effect of bus-bar material and configuration on the efficiency of GaInP/GaAs/Ge solar cells

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Malevskaya, A.V.^1 ; Malevski, D.A.^1 ; Il'Inskaya, N.D.^1

Ioffe Institute, Polytechnicheskaya 26, St.Petersburg

194021, Russia^1

关键词: Chemical deposition;    GaInP/GaAs/Ge;    Gold and silver;    Ohmic loss;    Truncated pyramids;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012039/pdf
DOI  :  10.1088/1742-6596/690/1/012039

来源: IOP

【 摘 要 】

The effect of bus-bar material and configuration was investigated for multi-junction solar cells (SC) based on GaInP/GaAs/Ge structure. Different configurations of contact busbars were obtained by the electro-chemical deposition of Ag and Au materials. The resistivity of contact bus-bars of gold and silver were measured. It is established that the bus-bars configuration in a form of truncated pyramids of 3-10 μm wide and of 4-8 μm thick located with a spacing less than 100 pm allows to reduce optical and ohmic losses and to increase the efficiency of SCs.