Model-simulation of light-induced defect creation in hydrogenated amorphous silicon

6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications 2014

Morigaki, K.^1,3 ; Hikita, H.^2

Department of Electrical-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima

731-5193, Japan^1

Physics Laboratory, Meikai University, Chiba, Urayasu

279-8550, Japan^2

C-305, Wakabadai 2-12, Inagi, Tokyo

206-0824, Japan^3

关键词: Diffusion distance;    Diffusion time;    Light induced defects;    Model simulation;    Monte Carlo computer simulations;    Non-radiative recombinations;    Self-trapped holes;    Simple-cubic lattices;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/619/1/012013/pdf
DOI  :  10.1088/1742-6596/619/1/012013

来源: IOP

【 摘 要 】

The processes of light-induced defect creation in hydrogenated amorphous silicon consist of self-trapping of holes in a weak Si-Si bond adjacent to a Si-H bond, nonradiative recombination of self-trapped holes with electrons, the Si-H bond switching towards the weak Si-Si bond, and hydrogen-hopping or -tunneling along the weak Si-Si bond. The Si-H bond switching and hydrogen movements are treated by Monte-Carlo computer simulation in a simple cubic lattice. From the result of 2> vs t in which r and t designate diffusion distance of hydrogen and diffusion time, respectively, the density of light-induced defects is estimated in a good agreement with the observed density.