InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm

Doping;MOCVD;Transistor lasers;Light emitting transistors;Device physics;InP/InAlGaAs

Huang, Yong ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: Doping;    MOCVD;    Transistor lasers;    Light emitting transistors;    Device physics;    InP/InAlGaAs;   

Others  :  https://smartech.gatech.edu/bitstream/1853/37298/1/huang_yong_201012_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions.This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system.First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated.Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and current gains (β).The device performances of Zn- and C-doped LETs have been compared, which is explained by a charge control analysis involving the quantum capture and recombination process in the QWs.A TL based on a C-doped double heterostructure (DH-TL) with single QW was designed and fabricated.The device lases at 77 K with a threshold current density (Jth) of 2.25 kA/cm2, emission wavelength (λ) at ~1.55 µm, and β of 0.02.The strong intervalence band absorption (IVBA) is considered as the main intrinsic optical loss that prohibits the device from lasing at room temperature.Based on a threshold condition analysis taking into account the strong IVBA, it is found that room-temperature lasing of a DH-TL is achieved only when the base thickness and doping level are within a specific narrow range and improved performance is expected in a separate confinement heterostructure (SCH) TL.