High Thermal Stability of κ-Ga2O3 Grown by MOCVD

Crystals

Junhee Lee¹  Manijeh Razeghi¹  Lakshay Gautam¹  Honghyuk Kim¹ 

[1] Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA;

关键词: MOCVD;    metal oxide;    thermal stability of κ-phase;    Ga₂O₃ polymorph;   

DOI  :  10.3390/cryst11040446

来源: DOAJ

【 摘 要 】

We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high temperature. Here, we show the kappa gallium oxide whose phase is stable in a high temperature annealing process at 1000 °C. These oxide films were grown at 690 °C under nitrogen carrier gas. The materials showed high electrical resistivity when doped with silicon, whereas the film conductivity was significantly improved when doped with both indium and silicon. This work provides a pathway to overcoming limitations for the advance in utilizing kappa gallium oxide possessing superior electrical characteristics.

【 授权许可】

Unknown