Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics

Epitaxial graphene;Silicon carbide;Indium gallium nitride;Nano selective area growth;Silicon nitride;Electronics;Optoelectronics;Nanotechnology

Puybaret, Renaud ; Voss, Paul L. Electrical and Computer Engineering Ougazzaden, Abdallah Naeemi, Azad Salvestrini, Jean Paul de Heer, Walter Alexander Berger, Claire ; Voss, Paul L.

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: Epitaxial graphene;    Silicon carbide;    Indium gallium nitride;    Nano selective area growth;    Silicon nitride;    Electronics;    Optoelectronics;    Nanotechnology;   

Others  :  https://smartech.gatech.edu/bitstream/1853/55541/1/PUYBARET-DISSERTATION-2015.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Silicon carbide and III-nitrides have been intensively used in the industry for the production of high-frequency electronics, power electronics, and optoelectronics, both separately and grown on each other. On the other side, silicon has been dominating the semiconductor market, but we are reaching its physical limits. Hence could epitaxial graphene on SiC be considered a possible successor for Si, and could it open, coupled with III- nitrides crystals, new roads towards the fabrication of novel and more performant high-frequency, power-, and opto-electronics?