Local laser annealing of 3C-SiC film deposited on the silicon substrate by CVD

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Avramchuk, A.V.^1 ; Komissarov, I.V.^1^2 ; Mikhalik, M.M.^2 ; Yu Fominski, V.^1 ; Romanov, R.I.^1 ; Sultanov, A.O.^1 ; Siglovaya, N.V.^1 ; Ryndya, S.M.^1 ; Gusev, A.S.^1 ; Labunov, V.A.^1^2 ; Kargin, N.I.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

Belarusian State University of Informatics and Radioelectronics, Petrusya Brovki 6, Minsk

220013, Belarus^2

关键词: Chemical vapor deposition methods;    Crystallographic quality;    Epitaxial graphene;    Laser annealing;    Laser treatment;    Pulse durations;    Repetition rate;    Silicon substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012036/pdf
DOI  :  10.1088/1757-899X/475/1/012036

来源: IOP

【 摘 要 】

In this work, we try to suite an approach, which concerns of epitaxial graphene growth by laser irradiation of 3C-SiC (111) film deposited on silicon substrate (111) by chemical vapor deposition method. Laser treatment was performed by pulsed 1064 nm laser with 20 Hz repetition rate and 15 ns pulse duration, the fluency was varied 0-1.5 J/cm2 . Raman spectroscopy studies show that for fluence above 0.8 J/cm2 2D band is noticeable revealing formation of high crystallographic quality graphitic (graphene) film.