Development of physico-technological basics of formation of structural organized ferroelectric films by the method of magnetron sputtering followed by laser processing

25th International Conference on Vacuum Technique and Technology

Redka, D.M.^1 ; Gordinskaya, T.V.^1 ; Mukhin, N.V.^1 ; Kozyrev, A.B.^1,2

St Petersburg Electrotechnical University LETI, St. Petersburg

197376, Russia^1

Dagestan University of National Economy, Makhachkala

367008, Russia^2

关键词: Ferroelectric semiconductors;    Index of refraction;    Laser annealing;    Laser process;    Organized films;    Oxide systems;    Residual polarization;    Technological aspects;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/387/1/012065/pdf
DOI  :  10.1088/1757-899X/387/1/012065

来源: IOP

【 摘 要 】

The current research considers physico-technological aspects of obtaining structural organized ferroelectric films on the basis of the oxide system of lead zirconate titanate with use of the HF methods of magnetron sputtering with the subsequent laser processing. The approach allows to obtain three types of structural organized films by local laser annealing on the basis of one oxide system: a ferroelectric-semiconductor composite, structure with periodically changing index of refraction and a ferroelectric material with periodically changing residual polarization.