Indium Nitride and Indium Gallium Nitride layers grown on nanorods

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Webster, R.F.^1 ; Cherns, D.^1 ; Goff, L.E.^2 ; Novikov, S.V.^2 ; Foxon, C.T.^2 ; Fischer, A.M.^3 ; Ponce, F.A.^3

Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom^1

School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom^2

Department of Physics, Arizona State University, Tempe, AZ, United States^3

关键词: Basal plane stacking faults;    Epitaxial alignment;    Indium gallium nitride;    Low growth temperature;    Nanorods grown;    Rich conditions;    SiC substrates;    Twist boundaries;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012025/pdf
DOI  :  10.1088/1742-6596/471/1/012025

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Molecular beam epitaxy has been used to grow InN layers on both Si and SiC substrates and In0.5Ga0.5N layers on Si substrates using a nanorod precursor array. Transmission electron microscopy (TEM) studies show that nanorods grown first under N-rich conditions, and then under more metal-rich conditions to promote lateral growth are free of dislocations until coalescence occurs. At coalescence, dislocations are introduced at grain boundaries. These are predominantly twist boundaries, with better epitaxial alignment seen on SiC substrates. The lateral growth of In0.5Ga0.5N is shown to be cubic, tentatively ascribed to the growth of basal plane stacking faults at the start of the lateral growth and the low growth temperatures used.