InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Emel'Yanov, E.A.^1 ; Vasev, A.V.^1 ; Semyagin, B.R.^1 ; Vasilenko, A.P.^1 ; Komanov, A.A.^1 ; Gutakovskii, A.K.^1 ; Putyato, M.A.^1 ; Preobrazhenskii, V.V.^1

ISP SB RAS, pr. Lavrentieva 13, Novosibirsk

630090, Russia^1

关键词: Crystalline properties;    GaAs(001);    Low growth temperature;    MBE layer;    Step-like increase;    TEM method;    Threading dislocation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012006/pdf
DOI  :  10.1088/1742-6596/643/1/012006

来源: IOP

【 摘 要 】

The influence of As molecular form on the composition and crystalline properties of InAsxSb1-xsolid solutions with MBE has been experimentally investigated. A series of samples has been grown at different growth temperatures. The grown samples were studied with the HRXRD and TEM methods. The incorporation coefficient of As4and As2molecules were determined at different growth temperatures. It has been found that the incorporation coefficient of As4much more dependent on growth temperature compared to As2. It has been found that at a low growth temperature a step-like increase of Sb fraction in an InAsxSb1-xfilm leads to a decrease of threading dislocations density in a layer with a smaller x.