Silicon carbide (SiC) is a high temperature semiconductor with the potential to meet the gas and temperature sensor needs in both present and future power generation systems. These devices have been and are currently being investigated for a variety of high temperature sensing applications. These include leak detection, fire detection, environmental control, and emissions monitoring. In these devices, thermal stability of the interfaces has been shown to be an essential requirement for improving and maintaining sensor sensitivity and lifetime. In this report, we describe device fabrication and characterization studies relevant to the development of SiC based gas and temperature sensors.