Characteristics, Theory and Modeling of the Transistor Laser

transistor laser;light-emitting transistor;Heterojunction Bipolar Transistor (HBT);Diode Laser;Quantum Well;differential gain;recombination;current gain;tunnel junction

Then, Han Wui

关键词: transistor laser;    light-emitting transistor;    Heterojunction Bipolar Transistor (HBT);    Diode Laser;    Quantum Well;    differential gain;    recombination;    current gain;    tunnel junction;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/14740/2_Then_HanWui.pdf?sequence=4&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties.These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers.The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser.An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.