Modulation Characteristics of High-Speed Transistor Lasers

Applied Sciences

Yongyi Chen¹  Li Qin¹  Qiang Cui¹  Lijun Wang¹  Yuxin Lei¹  Yongqiang Ning¹  Yubing Wang¹  Peng Jia¹  Lei Liang¹  Cheng Qiu¹  Yue Song¹  Lutai Fan¹ 

[1] State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;

关键词: transistor laser;    bandwidth;    modulation characteristics;    intracavity photon-assisted tunneling;   

DOI  :  10.3390/app12094475

来源: DOAJ

【 摘 要 】

The spontaneous emission recombination lifetime of carriers in the active region of transistor lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base region under the collector bias. Thus, it has the potential for use as a high-speed optical fiber communication light source. The unique three-electrode structure of TL notably enriches the modulation methods of the light source. As an important parameter to measure the data transfer rate, the modulation bandwidth of TL has been studied extensively. This paper briefly analyzes the inherent characteristics and advantages of TL and then discusses the progress in the research on TL modulation characteristics. Currently, the common methods to increase the modulation rate include optimizing the device structure, intracavity photon-assisted tunneling, and adding external auxiliary circuits. Through these techniques, single quantum well GaAs- based TL can achieve error-free transmission of 22 Gb/s, and simulation data show that for InP- based TL, this can reach 40 Gb/s. Finally, the challenges faced by TL in the area of optical fiber communication are elucidated.

【 授权许可】

Unknown