Theoretical analysis of the damping effect on a transistor laser

IEICE Electronics Express

Noriaki Sato¹  Shigehisa Arai¹  Mizuki Shirao¹  Nobuhiko Nishiyama¹ 

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

关键词: semiconductor laser;    transistor laser;    damping effect;   

DOI  :  10.1587/elex.9.1792

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(13)Cited-By(3)The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×1017cm3), as well as for a maximum modulation bandwidth of 45GHz.

【 授权许可】

Unknown