Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions

IEICE Electronics Express

Noriaki Sato¹  Masashi Yukinari¹  Shigehisa Arai¹  Nobuhiko Nishiyama¹ 

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

关键词: semiconductor laser;    transistor laser;    AlGaInAs/InP;   

DOI  :  10.1587/elex.11.20140679

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(17)The spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser were studied under various collector–base voltages and emitter currents. The result shows that the peak wavelength shifts as a function of the output power resulting from voltage and current controls exhibited contrasting behavior under a continuous-wave operation.

【 授权许可】

Unknown