Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers

Light-emitting transistor;light-emitting diode;tilted-charge;microcavity laser;transistor laser

Wu, Chao-Hsin

关键词: Light-emitting transistor;    light-emitting diode;    tilted-charge;    microcavity laser;    transistor laser;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/18587/Wu_Chao-Hsin.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years.In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design.In a light-emitting transistor or tilted-charge light-emitting diode, the effective carrier recombination lifetime can be readily reduced to 23 ps (spontaneous modulation bandwidth f-3dB = 7 GHz) by employing un-doped quantum wells in the highly-doped thin base region and allowing only “fast” recombining carriers to recombine through a reverse-biased base-collector junction boundary condition.A light-emitting transistor possesses, in addition, a unique three-terminal electrical-optical characteristic potentially leading to advantageous and useful features for high-speed short-range optical transmitters and interconnects.It has been shown that a microcavity vertical-cavity surface-emitting laser employing small aperture buried-oxide current and field confinement is also demonstrated with wider mode spacing and faster carrier recombination lifetime (enhanced Purcell factor ~ 2 to 8 times, but still limited cavity), lower threshold current, larger side mode suppression ratio, and higher photon density and temperature insensitivity.