A compact model for silicon controlled rectifiers in low voltage CMOS processes

Complementary metal–oxide–semiconductor (CMOS);integrated circuits;silicon;silicon controlled rectifiers (SCR);Electrostatic discharge (ESD)

Mertens, Robert ; Rosenbaum ; Elyse

关键词: Complementary metal–oxide–semiconductor (CMOS);    integrated circuits;    silicon;    silicon controlled rectifiers (SCR);    Electrostatic discharge (ESD);   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/49624/Robert_Mertens.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This thesis presents an SCR compact model for simulating ESD protection circuits. The aspects of the compact model that are necessary to reproduce measurement data, such as quasi-static I-V curves and transient voltage overshoot, are discussed. These aspects include conductivity modulation of the well resistances in the SCR, impact ionization at the N-well/P-well junction, and the influence of electric fields in the well region on carrier diffusion between the anode and cathode. Further, a detailed validation of the compact model is presented. A methodology for parameter extraction is also discussed.