Distributed scalable model for CMOS FET power amplifier

Radio Frequency (RF)+;Complementary metal–oxide–semiconductor (CMOS);Power Amplifier

Graham, Sean R. ; Feng ; Milton

关键词: Radio Frequency (RF)+;    Complementary metal–oxide–semiconductor (CMOS);    Power Amplifier;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/18454/Graham_Sean.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Integrated circuits are very popular for understandable reasons. A circuit implemented within an IC is more cost effective and reliable. A vast majority of ICs are created using silicon because it is cheap and the technology is mature. Unfortunately, communications power amplifiers have been scarce, due to the electrical advantages provided by III-V semiconductors.In order to reach similar power levels, power amplifiers implemented on silicon require larger transistors. It is common practice to create such transistors using multiple smaller transistors connected in parallel. As the frequency of operation increases, the connections between the smaller transistors affect the overall system’s behavior. Current industry standard models do not accurately compensate for these connections. This work discusses the development and results for a high-multiplicity MOS FET power amplifier model using layout transmission line considerations.ii