学位论文详细信息
Investigation of the hazards of substrate current injection: transient external latchup and substrate noise coupling
Latchup;Complementary metal–oxide–semiconductor (CMOS);Positive-Negative-Positive-Negative (PNPN);transient external latchup;substrate noise coupling
Kripanidhi, Arjun ; Rosenbaum ; Elyse
关键词: Latchup;    Complementary metal–oxide–semiconductor (CMOS);    Positive-Negative-Positive-Negative (PNPN);    transient external latchup;    substrate noise coupling;   
Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/26209/Kripanidhi_Arjun.pdf?sequence=1&isAllowed=y
美国|英语
来源: The Illinois Digital Environment for Access to Learning and Scholarship
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【 摘 要 】

Substrate current injection is the origin of external latchup and substrate noise coupling. The trigger current for external latchup depends on the duration of the trigger event. A physics-based model is provided to model the effects of aggressor to victim spacing and orientation on transient triggering of external latchup. The latchup susceptibility of standard cell based designs is also investigated. Guard rings are used to reduce latchup susceptibility and to reduce the substrate noise coupled to sensitive analog circuits. In this work, the effectiveness of different guard ring topologies for the reduction of substrate noise coupling is also investigated.

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