A radiation-hardened 14T SRAM cell for highly reliable space application

IEICE Electronics Express

article

Haineng Zhang¹  Zhongyang Liu¹  Yuqiao Xie¹  Yanjie Jia¹  Zhengxuan Zhang¹ 

[1] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;University of Chinese Academy of Sciences

关键词: SRAM cell;    single event upset;    high read stability;    critical charge;   

DOI  :  10.1587/elex.18.20210404

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A 14T SRAM bit-cell, implemented in 130-nm CMOS technology, with excellent read stability and soft error tolerance performance has been proposed. The parasitic extracted simulations show that compared with considered memory cells, the proposed cell achieves up to 146% read access time saving at the cost of acceptable layout area and leakage power dissipation overhead. The RSNM of 14T bit-cell is about x2.6 that of DICE structure, revealing excellent read stability. In addition, the proposed cell provides larger the critical charge, which indicates more superior soft error resilience ability.

【 授权许可】

CC BY