Half-filled orbital and unconventional geometry of a common dopant in Si(001)

Article

关键词: FERROMAGNETIC SEMICONDUCTOR;    ELECTRONIC-STRUCTURE;    SILICON;    DEFECTS;    SURFACE;    ATOMS;    PHOSPHORUS;    BISMUTH;   

DOI  :  10.1103/PhysRevB.88.035440

来源: SCIE

【 摘 要 】

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons, and have highly localized, half-filled orbitals.

【 授权许可】

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