Sub-millisecond dynamic nuclear spin hyperpolarization in a semiconductor: A case study from P-In antisite in InP

Article

关键词: DETECTED MAGNETIC-RESONANCE;    LOW-TEMPERATURE INP;    POLARIZATION;    DEFECTS;    SILICON;    STORAGE;    MEMORY;   

DOI  :  10.1103/PhysRevB.86.205202

来源: SCIE

【 摘 要 】

Optically detected magnetic resonance is employed to identify key factors governing dynamic nuclear polarization (DNP) in a semiconductor. We demonstrate that the extent of DNP can be efficiently controlled by varying lifetime of the localized electrons that transfer spin angular momentum to nuclei. The ultimate speed of a DNP process, on the other hand, is determined by the strength of hyperfine interaction that drives DNP. We show that about 50% nuclear spin polarization of a P-In antisite in InP can be achieved by shortening electron lifetime within a remarkably short time (<0.1 ms) due to strong hyperfine coupling.

【 授权许可】

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