Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

Rohatgi, A.

关键词: DEFECTS;    FABRICATION;    PASSIVATION;    PERFORMANCE;    SILICON SOLAR CELLS;    SIMULATION;    SOLAR CELLS;    SUBSTRATES PV;    SILICON;    RESEARCH AND DEVELOPMENT;    SOLAR CELLS;    CRYSTALLINE;    HIGH EFFICIENCY;    LOW COST;    CHARACTERIZATION;    D;   

DOI  :  10.2172/920928
RP-ID  :  NREL/SR-520-42324
PID  :  OSTI ID: 920928
Others  :  Other: AAT-2-31605-02
Others  :  TRN: US200803%%128

美国|英语

来源: SciTech Connect

【 摘 要 】

This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).