Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Article

关键词: CRYSTALLINE SILICON;    MOLECULES;    PASSIVATION;    NEUTRALIZATION;    ACCEPTORS;    DEFECTS;    DONORS;    STATES;    SI;   

DOI  :  10.1103/PhysRevB.72.245209

来源: SCIE

【 摘 要 】

The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of B-10 with B-11 were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

【 授权许可】

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