Microscopic structure of a VH4 center trapped by C in Si

Article

关键词: HYDROGEN ATMOSPHERE;    CRYSTALLINE SILICON;    LARGE SYSTEMS;    SOLAR-CELLS;    DEFECT;    PASSIVATION;    IMPURITIES;    ABSORPTION;    COMPLEXES;    ISOTOPE;   

DOI  :  10.1103/PhysRevB.84.195205

来源: SCIE

【 摘 要 】

The Simaterials typically used to fabricate solar cells often contain high concentrations of carbon and hydrogen impurities. One of the more thermally stable defects in Si that contains both C and H gives rise to a Si-H vibrational line at 2184.3 cm(-1). We show that this center also gives rise to additional weak Si-H and C-H lines at 2214.4 and 2826.9 cm(-1) (4.2 K). When D is partially substituted for H, rich isotopic splittings of these IR lines are produced. An analysis of these data reveals that the 2184.3, 2214.4, and 2826.9 cm(-1) lines are due to a VH4 defect bound to a substitutional C impurity, i.e., a VH3-HC center.

【 授权许可】

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