Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 28 April 2005 - 15 September 2008

Cohen, J. D.

关键词: ALLOYS;    COPPER;    DEFECTS;    EFFICIENCY;    ELECTRONS;    EVALUATION;    HYDROGEN;    IMPURITIES;    MANUFACTURING;    OXYGEN;    PERFORMANCE;    SILICON;    SUBSTRATES;    TEMPERATURE DEPENDENCE;    VALENCE PV;    CHARACTERIZATION;    AMORPHOUS SILICON;    THIN FILM;    MODULE PERFORMANCE;    HOT-WIRE CHEMICAL VAPOR DEPOSITION;    ELECTRONIC PROPERTIES;    CIGS;    CELL PERFORMANCE;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/969715
RP-ID  :  NREL/SR-520-47195
PID  :  OSTI ID: 969715
Others  :  Other: ZXL-5-44205-11
Others  :  TRN: US201002%%383

美国|英语

来源: SciTech Connect

【 摘 要 】

This report focuses on (1) characterizing nc-Si:H from United Solar; (2) studying Si,Ge:H alloys deposited by HWCVD; and (3) characterizing CIGS films and relating to cell performance parameters.