Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Nanophotonics

Rouifed Mohamed-Saïd¹  Coudevylle Jean-René¹  Chaisakul Papichaya¹  Edmond Samson¹  Le Roux Xavier¹  Vivien Laurent¹  Marris-Morini Delphine¹  Isella Giovanni²  Frigerio Jacopo²  Chrastina Daniel² 

[1] Institut d′Electronique Fondamentale, Univ. Paris-Sud, CNRS UMR 8622, Bât. 220, 91405 Orsay cedex, France;L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy;

关键词: quantum wells;    germanium;    silicon;    quantum confined stark effect;    electroluminescence;    epitaxial growth;   

DOI  :  10.1515/nanoph-2013-0018

来源: DOAJ

【 摘 要 】

Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicon or the modeling of these structures around both direct and indirect bandgaps. This paper will explore recent achievements in Ge/SiGe quantum wells structures. Quantum confined Stark effect has been studied for different quantum well designs and light polarization. Both absorption and phase variations have been characterized and will be reported. Carrier recombination processes is also an intense research topic, in order to evaluate the competition between direct and indirect band gap emission as a function of temperature. Main results and conclusion will be introduced. Finally, high performance photonic devices (modulator and photodetector) that have already been demonstrated will be presented. At the end the challenges faced by Ge/SiGe QW as a new photonic platform will be presented.

【 授权许可】

Unknown