Stochastic approach to the smart quantum confinement model in porous silicon

SURFACE SCIENCE

卷:515

Article

Ramírez-Porras, A ; Weisz, SZ

关键词: semi-empirical models and model calculations;    electrochemical methods;    photoluminescence;    silicon;    silicon oxides;    quantum wells;    semiconducting films;   

DOI  :  10.1016/S0039-6028(02)01963-5

来源: Elsevier

【 摘 要 】

A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework. (C) 2002 Elsevier Science B.V. All rights reserved.

【 授权许可】

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