Configuration transitions of divacancies in silicon and germanium

Âderna Fìzika ta Energetika

O. P. Dolgolenko¹ 

[1] Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine;

关键词: silicon;    germanium;    fast neutron;    divacancy;   

DOI  :  

来源: DOAJ

【 摘 要 】

High-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the float-ing zone melting after irradiation with fast neutron reactor at 320 C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, depending on its configuration are deter-mined. Values of the energy levels of divacancies and A - center after their modification background impurities are considered.

【 授权许可】

Unknown