Kephart, Jeremy Dale ; Albert Young, Committee Chair,Robert White, Committee Member,Christopher Gould, Committee Member,Paul Huffman, Committee Member,Kephart, Jeremy Dale ; Albert Young ; Committee Chair ; Robert White ; Committee Member ; Christopher Gould ; Committee Member ; Paul Huffman ; Committee Member
Motivated by planned double beta decay experiments in 76Ge I describe a computationalmodel for the electric fields of solid state diode detectors and the subsequentcharge transport. Aspects of detector performance determined by the impurity charge concentrationare explored in a series of measurements of comparable point contact" p-typegermanium detectors and compared to our computational model.In particular, we measure the capacitance of the germanium detector as a functionof the bias voltage to determine the free parameters in a three parameter model of theimpurity charge density, selectively mapping out the density at all points within the detectorvolume. We then use our impurity charge density map to determine the sensitivity of pulse shapeanalysis applied to various classes of physics events detected in the crystal. When possible,the impact of our refinements on a figure-of-merit for double-beta decay experiments isdescribed.
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Method of evaluating the effect of HPGe design on the sensitivity of physics experiments