Sensors | |
Comparative Study on the Performance of Five Different Hall Effect Devices | |
关键词: Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations; | |
DOI : 10.3390/s130202093 | |
来源: DOAJ |
【 摘 要 】
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
【 授权许可】
Unknown