Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires

Sensors

卷:18

Jean-Paul Yonnet¹  Julie Nabias¹  Aktham Asfour¹ 

[1] Univ. Grenoble Alpes, CNRS, Grenoble INP, G2ELab, 38000 Grenoble, France;

关键词: GMI sensor;    diagonal;    off-diagonal;    sensitivity;    offset;    torsion stress;    parameter of influence;   

DOI  :  10.3390/s18124121

来源: DOAJ

【 摘 要 】

In this paper, the torsional stress effect on Giant Magneto-Impedance (GMI) was studied in Co-rich amorphous wires. The study, which was conducted in the context of the development of a current clamp based on GMI, considered torsion as a parameter of the influence of this sensor. Both diagonal, Z₁₁, and off-diagonal, Z₂₁, components of the impedance tensor were investigated. The samples were Co-rich wires with a 100 µ diameter. The wires were twisted positive and negative angles with respect to a reference position. For each component of the impedance, the intrinsic sensitivity and offset were measured as a function of the rotation angle. The results showed that the sensitivity of the diagonal component at a given working point slightly increased for angles between −90° to +90°, whereas the sensitivity was almost constant for the off-diagonal component at zero-field. The intrinsic offset in the diagonal configuration was almost unchanged for the rotation angles considered, whereas this offset increased in the off-diagonal configuration. Furthermore, the GMI ratio of Z₁₁ was also measured as a function of the rotation angle for comparison purposes with known data. The maximum of this ratio was obtained for a rotation angle of about 50°.

【 授权许可】

Unknown