Comparative Study on the Performance of Five Different Hall Effect Devices

Sensors

Maria-Alexandra Paun¹  Jean-Michel Sallese² 

[1] STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;

关键词: Hall Effect sensor design;    offset;    sensitivity;    device polarization;    3D physical simulations;   

DOI  :  10.3390/s130202093

来源: mdpi

【 摘 要 】

Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.