Sensors | |
Comparative Study on the Performance of Five Different Hall Effect Devices | |
Maria-Alexandra Paun1  Jean-Michel Sallese2  | |
[1] STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland; | |
关键词: Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations; | |
DOI : 10.3390/s130202093 | |
来源: mdpi | |
【 摘 要 】
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
【 授权许可】
CC BY
© 2013 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190038629ZK.pdf | 524KB | download |